Power Loss Calculation for IGBT and SiC MOSFET

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DC Field	Value	Language
dc.contributor.author	Ms. Geetha K
dc.contributor.author	Dr. Sreenivasappa B V
dc.date.accessioned	2022-05-23T10:38:04Z	-
dc.date.available	2022-05-23T10:38:04Z	-
dc.date.issued	2020
dc.identifier.citation	Journal of Xi'an University of Architecture & Technology
dc.identifier.uri	http://localhost:8080/xmlui/handle/123456789/1814	-
dc.description.abstract	The efficiency of any system is mainly depended on power loss incurred in the devices used in it. In power converter circuits the main contribution for power loss is by the power switches used for converting signal. In this paper an attempt is made to describe the method available to find the power losses in converter circuit due to IGBT and SiC MOSFET. It is observed in the literature that the conduction losses for IGBT is lesser than MOSFET with same voltage and current the rating whereas the switching losses are greater in IGBT compared to MOSFET. The calculations performed in the paper shows that SiC MOSFET supersedes performance of IGBT and MOSFET and hence best suitable for high power and high switching frequency application.
dc.language.iso	en
dc.publisher	Science Press
dc.title	Power Loss Calculation for IGBT and SiC MOSFET
dc.type	Article
Appears in Collections:	Electronics and communication Department

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